Mitsubishi Electric IGBT power modulesMitsubishi IGBT modules are designed to be rugged, low loss and easy to use. Use of advanced processing technologies gives low on-state saturation voltages while maintaining the high switching speed needed for 20kHz operation. The information presented in this section is intended to help users of Mitsubishi IGBT modules apply the devices effectively and reliably.
Structure and Operation of IGBT Module The IGBT, Insulated Gate Bipolar Transistor, is a switching transistor that is controlled by voltage applied to the gate terminal. Device operation and structure are similar to those of an Insulated Gate Field Effect Transistor, more commonly known as a MOSFET. The principal difference between the two device types is that the IGBT uses conductivity modulation to reduce on-state conduction losses. | 
